Display apparatus and manufacturing method thereof

ABSTRACT

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 16/595,500, filed onOct. 8, 2019, now allowed, which is a continuation application of andclaims the priority benefit of a prior application Ser. No. 16/053,786,filed on Aug. 2, 2018, now patented, which is a divisional applicationof and claims the priority benefit of a prior application Ser. No.15/635,220, filed on Jun. 28, 2017, now patented. The prior applicationSer. No. 15/635,220 claims the priority benefits of U.S. provisionalapplication Ser. No. 62/371,246, filed on Aug. 5, 2016, U.S. provisionalapplication Ser. No. 62/376,925, filed on Aug. 19, 2016, U.S.provisional application Ser. No. 62/394,225, filed on Sep. 14, 2016,U.S. provisional application Ser. No. 62/429,162, filed on Dec. 2, 2016,and China application serial no. 201710159698.5, filed on Mar. 17, 2017.The entirety of each of the above-mentioned patent applications ishereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND OF THE INVENTION Field of the Invention

The disclosure relates to an apparatus and a manufacturing methodthereof, and more particularly, to a display apparatus and amanufacturing method thereof.

Description of Related Art

Since a light-emitting diode (LED) display apparatus has advantages suchas active light emission, high brightness, high contrast, and low powerconsumption, the LED display apparatus has become one of the techniquesof rigorous development for new displays in recent years. To meet highresolution requirements, the LED display apparatus is being developed toinclude an active device array substrate and micron-sized LEDs arrangedin an array.

SUMMARY OF THE INVENTION

The disclosure provides a display apparatus that can have good luminousefficiency or good structural strength.

The disclosure provides a manufacturing method of a display apparatusthat can manufacture a display apparatus having good luminousefficiency.

A display apparatus of the disclosure includes a substrate, atransistor, a metal layer, and a light-emitting diode. The transistor isdisposed on the substrate. The metal layer is disposed on the transistorand electrically connected to the transistor, wherein a first distanceis between the upper surface of the metal layer and the substrate in adirection perpendicular to the substrate. The light-emitting diode isdisposed on the metal layer, wherein the light-emitting diode includes alight-emitting diode body and an electrode, the light-emitting diodebody is electrically connected to the metal layer via the electrode, thelight-emitting diode body has a first surface and a second surfaceopposite to the first surface, the first surface and the second surfaceare parallel to the substrate, and in the direction above, a seconddistance is between the first surface and the second surface, whereinthe ratio of the second distance to the first distance is greater thanor equal to 0.25 and less than or equal to 6.

The manufacturing method of the display apparatus of the disclosureincludes the following steps. A light-emitting diode body is formed on asubstrate. A reflective structure is formed on the sidewall of thelight-emitting diode body.

In order to make the aforementioned features and advantages of thedisclosure more comprehensible, embodiments accompanied with figures aredescribed in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1 is a cross-sectional schematic diagram of a display apparatus ofan embodiment of the disclosure.

FIG. 2 is a cross-sectional schematic diagram of a display apparatus ofanother embodiment of the disclosure.

FIG. 3 is a cross-sectional schematic diagram of a light-emitting diodeof another embodiment of the disclosure.

FIG. 4 is a cross-sectional schematic diagram of a light-emitting diodeof another embodiment of the disclosure.

FIG. 5A to FIG. 5M are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.

FIG. 6A to FIG. 6B are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.

FIG. 7A to FIG. 7C are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.

FIG. 8A to FIG. 8J are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.

FIG. 9A to FIG. 9E are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.

FIG. 10A to FIG. 10E are cross sections of the process of amanufacturing method of a display apparatus of another embodiment of thedisclosure.

FIG. 11A to FIG. 11G are cross sections of the process of amanufacturing method of a display apparatus of another embodiment of thedisclosure.

DESCRIPTION OF THE EMBODIMENTS

In the present specification, wherever possible, the same referencenumerals are used in the drawings and the descriptions to refer to thesame or similar portions.

In the present specification, descriptions of forming another structureabove a structure or on a structure can include embodiments in which thestructure and the other structure are in direct contact, and can alsoinclude embodiments in which an additional structure can be formedbetween the structure and the other structure such that the structureand the other structure are not in direct contact.

In the following, various embodiments are provided to describe thedisplay apparatus of the disclosure in detail as examples of actualimplementation of the disclosure and are not intended to limit thedisclosure.

FIG. 1 is a cross-sectional schematic diagram of a display apparatus ofan embodiment of the disclosure. For ease of explanation, FIG. 1 onlyshows one pixel unit. However, any person having ordinary skill in theart should understand that, a display apparatus generally includes aplurality of pixel units arranged in an array.

Referring to FIG. 1, in the present embodiment, a display apparatus 10includes a substrate 100, a transistor T, a metal layer 110, and alight-emitting diode 120. Moreover, in the present embodiment, thedisplay apparatus can further include an insulating layer IL1 a gateinsulating layer GI, an insulating layer IL2, an insulating layer IL3, aflat layer PL, a conductive adhesive layer 130, an insulating layer IL4,and an opposite substrate 140.

The material of the substrate 100 can be, for instance, glass, quartz,organic polymer, or metal material, wherein the organic polymer is, forinstance (but not limited to): polyimide (PI), polyethyleneterephthalate (PET), or polycarbonate (PC).

The transistor T is disposed on the substrate 10. In the presentembodiment, the transistor T includes a semiconductor layer SC and agate G located above the semiconductor layer SC. Specifically, thesemiconductor layer SC includes a channel region CH and source/drainregions S/D, wherein the gate G is located above the channel region CH,and the source/drain regions S/D are located at two sides of the channelregion CH. In the present embodiment, the material of the semiconductorlayer SC is low-temperature polysilicon, that is, the transistor T is alow-temperature polysilicon thin film transistor. Moreover, out ofconsideration for conductivity, the material of the gate G is generallya metal material such as aluminum, molybdenum, titanium, gold, indium,tin, or a combination thereof. However, the disclosure is not limitedthereto, and in other embodiments, the material of the gate G can alsoinclude, for instance (but not limited to): other conductive materialssuch as alloy, nitride of metal materials, oxide of metal materials, oroxynitride of metal materials, or stacked layers of metal materials andthe other conductive materials above.

Moreover, a gate insulating layer GI is disposed between the gate G andthe semiconductor layer SC, wherein the gate insulating layer GI isconformally formed on the substrate 100 and covers the semiconductorlayer SC. The material of the gate insulating layer GI can be, forinstance (but not limited to): inorganic material, organic material, ora combination thereof, wherein the inorganic material is, for instance(but not limited to): silicon oxide, silicon nitride, siliconoxynitride, or stacked layers of at least two of the materials above;and the organic material is, for instance (but not limited to): apolymer material such as polyimide resin, epoxy resin, or acrylic resin.

Moreover, an insulating layer IL1 is disposed between the substrate 100and the semiconductor layer SC, wherein the insulating layer IL1 isconformally formed on the substrate 100. The material of the insulatinglayer IL1 can be, for instance (but not limited to): silicon oxide,silicon nitride, silicon oxynitride, or stacked layers of at least twoof the materials above.

Moreover, insulating layers IL2 and IL3 further cover the gate G toprotect the gate G. The insulating layer IL3 is located on theinsulating layer IL2, and the insulating layers IL2 and IL3 arerespectively conformally formed on the substrate 100. Moreover, thematerial of the insulating layers IL2 and IL3 can be (but not limitedto): inorganic material, organic material, or a combination thereof,wherein the inorganic material is, for instance (but not limited to):silicon oxide, silicon nitride, silicon oxynitride, or stacked layers ofat least two of the materials above; and the organic material is, forinstance (but not limited to): a polymer material such as polyimideresin, epoxy resin, or acrylic resin.

The metal layer 110 is disposed on the transistor T and electricallyconnected to the transistor T. Specifically, in the present embodiment,the metal layer 110 includes a first metal layer 110 a and a secondmetal layer 110 b located above the first metal layer 110 a. In otherwords, in the present embodiment, the metal layer 110 includes two filmlayers stacked upon each other. However, the disclosure is not limitedthereto. In other embodiments, the metal layer 110 can also only includea single film layer. For instance, the metal layer 110 can only includethe first metal layer 110 a used as the source/drain electrode and notinclude the second metal layer 110 b.

Moreover, in the present embodiment, a distance A1 is between the uppersurface TS of the metal layer 110 and the substrate 100 in a direction Dperpendicular to the substrate 100. In an embodiment, the distance A1can be greater than or equal to 2 μm and less than or equal to 8 μum. Inanother embodiment, the distance A1 can be greater than or equal to 2 μmand less than or equal to 5 μm. In another embodiment, the distance A1can be greater than or equal to 3 μm and less than or equal to 8 μm. Inanother embodiment, the distance A1 can be greater than or equal to 4 μmand less than or equal to 8 μm. It should be mentioned that, since themetal layer 110 includes the first metal layer 110 a and the secondmetal layer 110 b, the upper surface TS is the top surface of the secondmetal layer 110 b. Moreover, as described above, since the metal layer110 can also only include the first metal layer 110 a, at this point,the upper surface TS is the top surface of the first metal layer 110 a.

The first metal layer 110 a is formed in a contact hole Va in the gateinsulating layer GI, the insulating layer IL2, and the insulating layerIL3 to be electrically connected to the source/drain regions S/D. Inother words, in the present embodiment, the first metal layer 110 a isused as the source/drain electrode. Moreover, the material of the firstmetal layer 110 a includes (but is not limited to): aluminum,molybdenum, titanium, gold, indium, tin, or a combination thereof.

Moreover, the flat layer PL further covers the first metal layer 110 ato increase flatness. The material of the flat layer PL can be (but isnot limited to): inorganic material, organic material, or a combinationthereof, wherein the inorganic material is, for instance (but notlimited to): silicon oxide, silicon nitride, silicon oxynitride, orstacked layers of at least two of the materials above; and the organicmaterial is, for instance (but not limited to): a polymer material suchas polyimide resin, epoxy resin, or acrylic resin.

The second metal layer 110 b is formed in a contact hole Vb in the flatlayer PL to be electrically connected to the first metal layer 110 a.The material of the second metal layer 110 b includes (but is notlimited to): aluminum, molybdenum, titanium, gold, indium, tin, or acombination thereof. Moreover, in the present embodiment, thelight-emitting diode 120 is electrically connected to the first metallayer 110 a used as the source/drain electrode via the second metallayer 110 b. In other words, in the present embodiment, thelight-emitting diode 120 and the second metal layer 110 b areelectrically connected, and the second metal layer 110 b is used as aconnecting electrode.

The light-emitting diode 120 is disposed on the metal layer 110. In thepresent embodiment, the light-emitting diode 120 includes alight-emitting diode body LB and an electrode 126 a. Specifically, inthe present embodiment, the light-emitting diode body LB in thelight-emitting diode 120 is electrically connected to the second metallayer 110 b of the metal layer 110 via the electrode 126 a. However,similarly, since the metal layer 110 can also only include the firstmetal layer 110 a, at this point, the light-emitting diode body LB iselectrically connected to the first metal layer 110 a via the electrode126 a. Moreover, in the present embodiment, the light-emitting diode 120further includes an electrode 126 b. Moreover, in the presentembodiment, the light-emitting diode 120 is a vertical type microlight-emitting diode.

In the present embodiment, the light-emitting diode body LB has asurface S1 and a surface S2 opposite to the surface S1, the surface S1and the surface S2 are both parallel to the substrate 100, and in thedirection D, a distance A2 is between the surface S1 and the surface S2.In an embodiment, the distance A2 can be greater than or equal to 2 μmand less than or equal to 12 μm. In another embodiment, the distance A2can be greater than or equal to 3 μm and less than or equal to 10 μm. Inanother embodiment, the distance A2 can be greater than or equal to 4 μmand less than or equal to 8 μm.

It should be mentioned that, in an embodiment, the ratio of the distanceA2 to the distance A1 can be greater than or equal to 0.25 and less thanor equal to 6. In another embodiment, the ratio of the distance A2 tothe distance A1 can be greater than or equal to 0.6 and less than orequal to 5. In another embodiment, the ratio of the distance A2 to thedistance A1 can be greater than or equal to 1 and less than or equal to4. If the ratio of the distance A2 to the distance A1 is less than 0.25,then the structural strength of the display apparatus 10 may beweakened; and if the ratio of the distance A2 to the distance A1 isgreater than 6, then the luminous efficiency or efficiency of heatdissipation . . . etc. of the display apparatus 10 may be reduced.

Moreover, in the present embodiment, to increase the luminous efficiencyof the display apparatus 10, the surface S2 can have a plurality ofgrooves M. That is, the surface S2 is a rugged and uneven surface.Therefore, in the present embodiment, the distance A2 is in actualitythe length between the highest point of the surface S2 to the surfaceS1. Specifically, in the present embodiment, the depth of the grooves Mis about 0.25 μm to 1 μm. However, the disclosure is not limitedthereto. In other embodiments, the surface S2 can also be a flatsurface. For instance, the surface S2 may not have the plurality ofgrooves M, and the distance A2 can be directly measured from the surfaceS2 to the surface S1. As another example, the surface S2 can havegrooves M having a depth less than 0.2 μm, and the distance A2 is thelength between the highest point of the surface S2 to the surface S1.

In the present embodiment, the light-emitting diode body LB includes afirst conductivity type semiconductor layer 122 a, an active layer 124,and a second conductivity type semiconductor layer 122 b. The activelayer 124 is disposed on the first conductivity type semiconductor layer122 a. The second conductivity type semiconductor layer 122 b isdisposed on the active layer 124. The material of the first conductivitytype semiconductor layer 122 a is, for instance (but not limited to):GaN doped with a first conductivity type dopant or other suitablematerials such as GaN doped with magnesium. The material of the activelayer 124 is, for instance (but not limited to): a multiple quantumwell, and the material thereof is, for instance, InGaN/GaN or othersuitable materials. The material of the second conductivity typesemiconductor layer 122 b is, for instance (but not limited to): GaNdoped with a second conductivity type dopant or other suitable materialssuch as GaN doped with silicon. Moreover, in the present embodiment, thefirst conductivity type semiconductor layer 122 a is, for instance, aP-type semiconductor layer, and the second conductivity typesemiconductor layer 122 b is, for instance, an N-type semiconductorlayer. Therefore, the electrode 126 a in contact with the firstconductivity type semiconductor layer 122 a is, for instance, a P-typeelectrode, and the electrode 126 b in contact with the secondconductivity type semiconductor layer 122 b is, for instance, an N-typeelectrode. However, the disclosure is not limited thereto. In otherembodiments, the first conductivity type semiconductor layer 122 a is,for instance, an N-type semiconductor layer, and the second conductivitytype semiconductor layer 122 b is, for instance, a P-type semiconductorlayer. Therefore, the electrode 126 a in contact with the firstconductivity type semiconductor layer 122 a is, for instance, an N-typeelectrode, and the electrode 126 b in contact with the secondconductivity type semiconductor layer 122 b is, for instance, a P-typeelectrode.

It should be mentioned that, in the present embodiment, the surface S1is the bottom surface of the first conductivity type semiconductor layer122 a, and the surface S2 is the top surface of the second conductivitytype semiconductor layer 122 b. In other words, in the presentembodiment, the distance A2 is the length between the bottom surface ofthe first conductivity type semiconductor layer 122 a and the topsurface of the second conductivity type semiconductor layer 122 b.Moreover, as described above, to increase the luminous efficiency of thedisplay apparatus 10, the surface S2 of the light-emitting diode body LBcan have a plurality of grooves M, and therefore in the presentembodiment, the second conductivity type semiconductor layer 122 b has aplurality of grooves M.

In the present embodiment, the conductive adhesive layer 130 is used toelectrically connect the electrode 126 a of the light-emitting diode 120and the second metal layer 110 b of the metal layer 110. The material ofthe conductive adhesive layer 130 is, for instance (but not limited to):anisotropic conductive adhesive (ACA). Based on storage appearance, ACAincludes anisotropic conductive paste (ACP) and anisotropic conductivefilm (ACF). However, the disclosure is not limited thereto, and anyperson having ordinary skill in the art can electrically connect theelectrode 126 a of the light-emitting diode 120 and the second metallayer 110 b of the metal layer 110 via any known bonding method. Forinstance, the electrode 126 a of the light-emitting diode 120 and thesecond metal layer 110 b of the metal layer 110 can also be electricallyconnected to each other via a eutectic bonding method. Moreover, asdescribed above, since the metal layer 110 can also only include thefirst metal layer 110 a, at this point, the conductive adhesive layer130 is used to electrically connect the electrode 126 a of thelight-emitting diode 120 and the first metal layer 110 a.

Moreover, an insulating layer IL4 further covers the conductive adhesivelayer 130. The material of the insulating layer IL4 can be (but is notlimited to): inorganic material, organic material, or a combinationthereof, wherein the inorganic material is, for instance (but notlimited to): silicon oxide, silicon nitride, silicon oxynitride, orstacked layers of at least two of the materials above; and the organicmaterial is, for instance (but not limited to): a polymer material suchas polyimide resin, epoxy resin, or acrylic resin.

In the present embodiment, the opposite substrate 140 includes asubstrate 142, a color filter layer CF, a wavelength conversion layerWT, a light-blocking pattern layer BK, and an adhesive layer 144disposed on the substrate 142. However, the disclosure is not limitedthereto. In other embodiments, only the color filter layer CF or thewavelength conversion layer WT may be disposed on the substrate 142.

The material of the substrate 142 can be, for instance, glass, quartz,organic polymer, or metal material, wherein the organic polymer is, forinstance (but not limited to): polyimide (PI), polyethyleneterephthalate (PET), or polycarbonate (PC).

The color filter layer CF can be any color filter layer known to anyperson having ordinary skill in the art. For instance, the color filterlayer CF can include a red filter pattern, a green filter pattern, and ablue filter pattern.

The wavelength conversion layer WT is disposed in correspondence to thelight-emitting diode 120. The wavelength conversion layer WT can be anywavelength conversion layer known to any person having ordinary skill inthe art. For instance, the material of the wavelength conversion layerWT can include (but is not limited to): a quantum dot material, afluorescent powder material, a phosphor powder material, or acombination thereof.

The light-blocking pattern layer BK is disposed in correspondence to thewavelength conversion layer WT. Specifically, in the present embodiment,the light-blocking pattern layer BK can be used to shield devices andtraces in the display apparatus 10 not to be seen by the user such asscan lines (not shown), data lines (not shown), and the transistor T.Moreover, the light-blocking pattern layer BK is, for instance, a blackmatrix (BM). Moreover, the material of the light-blocking pattern layerBK includes, for instance (but is not limited to): black resin, othercolored resins, black photoresist, other colored photoresists, metal, ora single-layer or multi-layer structure formed by the above.

The adhesive layer 144 is disposed between the color filter layer CF andthe wavelength conversion layer WT, and the color filter layer CF andthe light-blocking pattern layer BK to adhere the color filter layer CF,the wavelength conversion layer WT, and the light-blocking pattern layerBK. The material of the adhesive layer 144 includes, for instance (butis not limited to): an organic insulating material, an inorganicinsulating material, an insulating material formed by mixing organicinsulating material and inorganic insulating material, or a structurestacked by the above materials.

It should be mentioned that, the opposite substrate 140 of the presentembodiment includes the color filter layer CF, the wavelength conversionlayer WT, the light-blocking pattern layer BK, and the adhesive layer144 disposed on the substrate 142. However, the disclosure is notlimited thereto. In other embodiments, the opposite substrate 140 can beany opposite substrate known to any person having ordinary skill in theart. Moreover, in the present embodiment, the display apparatus 10includes the opposite substrate 140, but the disclosure is not limitedthereto. In other embodiments, the display apparatus 10 can also notinclude the opposite substrate.

Moreover, in the present embodiment, the adhesive layer 144 is locatedbetween the color filter layer CF and the wavelength conversion layerWT, but the disclosure is not limited thereto. In other embodiments, thecolor filter layer CF can also be located between the adhesive layer 144and the wavelength conversion layer WT, i.e., the adhesive layer 144 canbe in direct contact with the substrate 142.

It should be mentioned that, as described above, in the presentembodiment, in the direction D, the ratio of the distance A2 between thesurface S1 and the surface S2 of the light-emitting diode 120 to thedistance A1 between the upper surface TS of the metal layer 110 and thesubstrate 100 is greater than or equal to 0.25 and less than or equal to6, and therefore the display apparatus 10 can have good luminousefficiency or good structural strength.

Moreover, although the light-emitting diode 120 in the embodiment ofFIG. 1 is a vertical type micro light-emitting diode, the disclosure isnot limited thereto. In other embodiments, the light-emitting diode canalso be a flip-chip type micro light-emitting diode. In the following,description is provided with reference to FIG. 2. It should be mentionedhere that, the embodiments below adopt the reference numerals of theembodiments above and a portion of the content thereof, wherein the sameor similar reference numerals are used to represent the same or similardevices and descriptions of the same technical content are omitted. Theomitted portions are described in the previous embodiments and are notrepeated in the following embodiments.

FIG. 2 is a cross-sectional schematic diagram of a display apparatus ofanother embodiment of the disclosure. Referring to both FIG. 2 and FIG.1, in a display apparatus 20, a light-emitting diode 220 is a flip-chiptype micro light-emitting diode; and in the display apparatus 10, thelight-emitting diode 120 is a vertical type micro light-emitting diode.In the following, the differences between the embodiment of FIG. 2 andthe embodiment of FIG. 1 are described.

Referring to FIG. 2, the light-emitting diode 220 includes alight-emitting diode body 2LB, an electrode 226 a, and an electrode 226b, wherein the light-emitting diode body 2LB includes a firstconductivity type semiconductor layer 222 a, an active layer 224, and asecond conductivity type semiconductor layer 222 b. Specifically, in thepresent embodiment, the second conductivity type semiconductor layer 222b is disposed on the electrode 226 a and the electrode 226 b, the firstconductivity type semiconductor layer 222 a is disposed between thesecond conductivity type semiconductor layer 222 b and the electrode 226b, and the light-emitting diode body 2LB in the light-emitting diode 220is electrically connected to the second metal layer 110 b of the metallayer 110 via the electrode 226 a.

In the present embodiment, the material of the first conductivity typesemiconductor layer 222 a is, for instance (but not limited to): GaNdoped with a first conductivity type dopant or other suitable materialssuch as GaN doped with magnesium. The material of the active layer 224is, for instance (but not limited to): a multiple quantum well, and thematerial thereof is, for instance, InGaN/GaN or other suitablematerials. The material of the second conductivity type semiconductorlayer 222 b is, for instance (but not limited to): GaN doped with asecond conductivity type dopant or other suitable materials such as GaNdoped with silicon. Moreover, in the present embodiment, the firstconductivity type semiconductor layer 222 a is, for instance, a P-typesemiconductor layer, and the second conductivity type semiconductorlayer 222 b is, for instance, an N-type semiconductor layer. Therefore,the electrode 226 b in contact with the first conductivity typesemiconductor layer 222 a is, for instance, a P-type electrode, and theelectrode 226 a in contact with the second conductivity typesemiconductor layer 222 b is, for instance, an N-type electrode.However, the disclosure is not limited thereto. In other embodiments,the first conductivity type semiconductor layer 222 a is, for instance,an N-type semiconductor layer, and the second conductivity typesemiconductor layer 222 b is, for instance, a P-type semiconductorlayer. Therefore, the electrode 226 b in contact with the firstconductivity type semiconductor layer 222 a is, for instance, an N-typeelectrode, and the electrode 226 a in contact with the secondconductivity type semiconductor layer 222 b is, for instance, a P-typeelectrode.

In the present embodiment, the light-emitting diode body 2LB has asurface 2S1 and a surface 2S2 opposite to the surface 2S1, the surface2S1 and the surface 2S2 are both parallel to the substrate 100, and inthe direction D, a distance 2A2 is between the surface 2S1 and thesurface 2S2. In an embodiment, the distance 2A2 can be greater than orequal to 2 μm and less than or equal to 12 μm. In another embodiment,the distance 2A2 can be greater than or equal to 3 μm and less than orequal to 10 μm. In another embodiment, the distance 2A2 can be greaterthan or equal to 4 μm and less than or equal to 8 μm.

It should be mentioned that, in an embodiment, the ratio of the distance2A2 to the distance A1 can be greater than or equal to 0.25 and lessthan or equal to 6. In another embodiment, the ratio of the distance 2A2to the distance A1 can be greater than or equal to 0.6 and less than orequal to 5. In another embodiment, the ratio of the distance 2A2 to thedistance A1 can be greater than or equal to 1 and less than or equal to4. If the ratio of the distance 2A2 to the distance A1 is less than0.25, then the structural strength of the display apparatus 20 may beweakened; and if the ratio of the distance 2A2 to the distance A1 isgreater than 6, then the luminous efficiency or efficiency of heatdissipation . . . etc. of the display apparatus 20 may be reduced.

It should be mentioned that, in the present embodiment, the surface 2S1is the bottom surface of the first conductivity type semiconductor layer222 a, and the surface 2S2 is the top surface of the second conductivitytype semiconductor layer 222 b. In other words, in the presentembodiment, the distance 2A2 is the length between the bottom surface ofthe first conductivity type semiconductor layer 222 a and the topsurface of the second conductivity type semiconductor layer 222 b.Moreover, in FIG. 2, although the surface 2S2 is a flat surface, basedon the descriptions related to FIG. 1, any person having ordinary skillin the art should understand that, to increase the luminous efficiencyof the display apparatus 20, the surface 2S2 can also have a pluralityof grooves. In other words, at this point, the distance 2A2 is inactuality the length between the highest point of the surface 2S2 andthe surface 2S1, and the second conductivity type semiconductor layer222 b has a plurality of grooves.

In the present embodiment, the display apparatus 20 further includes anelectrode pattern 250 disposed on the flat layer PL. Specifically, inthe present embodiment, the electrode pattern 250 and the second metallayer 110 b may belong to the same film layer and have the samematerial. In other words, in the present embodiment, the electrodepattern 250 and the second metal layer 110 b are, for instance, formedtogether in the same lithography and etching process. In the presentembodiment, the material of the electrode pattern 250 and the secondmetal layer 110 b is, for instance (but not limited to): aluminum,molybdenum, titanium, gold, indium, tin, or a combination thereof.

Moreover, in the present embodiment, the light-emitting diode body 2LBis electrically connected to the second metal layer 110 b via theelectrode 226 a and electrically connected to the electrode pattern 250via the electrode 226 b. More specifically, in the present embodiment,the electrode 226 a and the electrode 226 b are respectivelyelectrically connected to the second metal layer 110 b and the electrodepattern 250 via the conductive adhesive layer 130. Similarly, thedisclosure is not limited thereto, and any person having ordinary skillin the art can electrically connect the electrode 226 a and the secondmetal layer 110 b and electrically connect the electrode 226 b and theelectrode pattern 250 via any known bonding method. For instance, theelectrode 226 a and the electrode 226 b can also be respectivelyelectrically connected to the second metal layer 110 b and the electrodepattern 250 via a eutectic bonding method.

It should be mentioned that, as described above, in the presentembodiment, in the direction D, the ratio of the distance 2A2 betweenthe surface 2S1 and the surface 2S2 of the light-emitting diode 220 tothe distance A1 between the upper surface TS of the metal layer 110 andthe substrate 100 is greater than or equal to 0.25 and less than orequal to 6, and therefore the display apparatus 20 can have goodluminous efficiency or good structural strength. Moreover, in theembodiment of FIG. 1, the light-emitting diode 120 includes thelight-emitting diode body LB, the electrode 126 a, and the electrode 126b, and in the embodiment of FIG. 2, the light-emitting diode 220includes the light-emitting diode body 2LB, the electrode 226 a, and theelectrode 226 b, but the disclosure is not limited thereto. In otherembodiments, the light-emitting diode can further include a buffer layerdisposed on the light-emitting diode body. In the following, detaileddescription is provided with reference to FIG. 3 and FIG. 4.

FIG. 3 is a cross-sectional schematic diagram of a light-emitting diodeof another embodiment of the disclosure. Referring to both FIG. 3 andFIG. 1, a light-emitting diode 320 of FIG. 3 is similar to thelight-emitting diode 120 of FIG. 1, and therefore the same or similardevices are represented by the same or similar reference numerals, andrelevant descriptions are not repeated. In the following, thedifferences between the two are described.

Referring to FIG. 3, a buffer layer 360 is disposed on thelight-emitting diode body LB, and the top surface S3 of the buffer layer360 has a plurality of grooves 3M. Specifically, in the presentembodiment, the buffer layer 360 is located between the secondconductivity type semiconductor layer 122 b of the light-emitting diodebody LB and the electrode 126 b. In the present embodiment, the materialof the buffer layer 360 includes (but is not limited to): aluminum oxide(Al₂O₃), undoped gallium nitride (GaN), silicon nitride, silicon oxide,or a stacked structure or the above materials. Moreover, in the presentembodiment, the depth of the grooves 3M is about 0.25 μm to 1 μm.

It should be mentioned that, in the present embodiment, thelight-emitting diode 320 includes the buffer layer 360 disposed on thelight-emitting diode body LB and the top surface S3 of the buffer layer360 has the plurality of grooves 3M, and therefore the luminousefficiency of the display apparatus 30 can be increased withoutdisposing the grooves M on the surface S2 of the light-emitting diodebody LB. As a result, in the present embodiment, the surface S2 of thelight-emitting diode body LB is a flat surface, and the distance A2 canbe directly measured from the surface S2 to the surface S1.

FIG. 4 is a cross-sectional schematic diagram of a light-emitting diodeof another embodiment of the disclosure. Referring to both FIG. 4 andFIG. 2, a light-emitting diode 420 of FIG. 4 is similar to thelight-emitting diode 220 of FIG. 2, and therefore the same or similardevices are represented by the same or similar reference numerals, andrelevant descriptions are not repeated. In the following, thedifferences between the two are described.

Referring to FIG. 4, a buffer layer 460 is disposed on thelight-emitting diode body 2LB, and a top surface S4 of the buffer layer460 has a plurality of grooves 4M. Specifically, in the presentembodiment, the buffer layer 460 is located on the second conductivitytype semiconductor layer 222 b of the light-emitting diode body 2LB. Inthe present embodiment, the material of the buffer layer 460 includes(but is not limited to): Al₂O₃, undoped GaN, silicon nitride, siliconoxide, or a stacked structure of the above materials. Moreover, in thepresent embodiment, the depth of the grooves 4M is about 0.25 μm to 1μm.

It should be mentioned that, in the present embodiment, thelight-emitting diode 420 includes the buffer layer 460 disposed on thelight-emitting diode body 2LB and the top surface S4 of the buffer layer460 has the plurality of grooves 4M, and therefore the luminousefficiency of the display apparatus 40 can be increased. As a result, inthe present embodiment, grooves are not needed on the surface 2S2 of thelight-emitting diode body 2LB and the surface 2S2 of the light-emittingdiode body 2LB is a flat surface, and the distance 2A2 can be directlymeasured from the surface 2S2 to the surface 2S1.

Moreover, although the embodiments of FIG. 1 to FIG. 2 disclose thetransistor T is a low-temperature polysilicon thin-film transistor andalthough the embodiments of FIG. 1 to FIG. 4 disclose the light-emittingdiodes 120, 220, 320, and 420, the disclosure is not limited thereto.Specifically, the display apparatus of the disclosure can include anytype of transistor known to any person having ordinary skill in the art,such as a metal oxide thin-film transistor, an amorphous siliconthin-film transistor, a silicon-based thin-film transistor, a microsilicon thin-film transistor, or a transparent thin-film transistor; andthe display apparatus of the disclosure can include any light-emittingdiode structure known to any person having ordinary skill in the art,provided that the ratio of the distance between the bottom surface ofthe first conductivity type semiconductor layer in the light-emittingdiode body and the top surface of the second conductivity typesemiconductor layer to the distance between the substrate and the uppersurface of the metal layer respectively electrically connected to thetransistor and the light-emitting diode is greater than or equal to 0.25and less than or equal to 6. In other words, the disclosure does notparticularly limit the type of the transistor and the structure of thelight-emitting diode. For instance, in the display apparatus of anembodiment, the light-emitting diode can further include a reflectivestructure disposed on the sidewall of the light-emitting diode body toincrease the luminous efficiency of the display apparatus. In thefollowing, the manufacturing method of the display apparatus of severalembodiments is described in detail with reference to FIG. 5A to FIG. 5M,FIG. 6A to FIG. 6B, FIG. 7A to FIG. 7C, FIG. 8A to FIG. 8J, FIG. 9A toFIG. 9E, FIG. 10A to FIG. 10E, and FIG. 11A to FIG. 11G.

FIG. 5A to FIG. 5M are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.

First, referring to FIG. 5A, a first conductivity type semiconductormaterial layer 510, an active material layer 511, and a secondconductivity type semiconductor material layer 512 are formed on asubstrate 500 in order. The substrate 500 is, for instance, a sapphiresubstrate, and the thickness thereof is, for instance, greater than orequal to 450 μm. The material of the first conductivity typesemiconductor material layer 510 is, for instance (but not limited to):GaN doped with a first conductivity type dopant or other suitablematerials such as GaN doped with silicon. The material of the activematerial layer 511 is, for instance (but not limited to): a multiplequantum well, and the material thereof is, for instance, InGaN/GaN orother suitable materials. The material of the second conductivity typesemiconductor material layer 512 is, for instance (but not limited to):GaN doped with a second conductivity type dopant or other suitablematerials such as GaN doped with magnesium. Moreover, the firstconductivity type semiconductor material layer 510 is, for instance, anN-type semiconductor material layer, and the second conductivity typesemiconductor material layer 512 is, for instance, a P-typesemiconductor material layer. Moreover, the forming method of the firstconductivity type semiconductor material layer 510, the active materiallayer 511, and the second conductivity type semiconductor material layer512 is, for instance (but not limited to): a metal organic chemicalvapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method,or other suitable epitaxial growth methods.

Afterwards, referring to FIG. 5B, a patterned photoresist layer 513 isformed on the second conductivity type semiconductor material layer 512.Specifically, in the present embodiment, the patterned photoresist layer513 is formed by any half tone process known to any person havingordinary skill in the art.

Next, referring to FIG. 5C, a reflow process is performed on thepatterned photoresist layer 513 to form a reflowed patterned photoresistlayer 514. Specifically, in the present embodiment, the reflowedpatterned photoresist layer 514 has an arc-shaped contour. Moreover, inthe present embodiment, any reflow process known to any person havingordinary skill in the art can be performed on the patterned photoresistlayer 513.

Next, referring to FIG. 5D, a portion of the first conductivity typesemiconductor material layer 510, a portion of the active material layer511, and a portion of the second conductivity type semiconductormaterial layer 512 are removed using the reflowed patterned photoresistlayer 514 as a mask to form a first conductivity type semiconductorlayer 515, an active layer 516, and a second conductivity typesemiconductor layer 517. Specifically, in the present embodiment, thefirst conductivity type semiconductor layer 515, the active layer 516,and the second conductivity type semiconductor layer 517 form alight-emitting diode body 518, wherein the light-emitting diode body 518is a trapezoidal structure and has an angle θ, and the angle θ is about30 degrees to 85 degrees, preferably about 60 degrees. Moreover, in thepresent embodiment, the method of removing a portion of the firstconductivity type semiconductor material layer 510, a portion of theactive material layer 511, and a portion of the second conductivity typesemiconductor material layer 512 is, for instance (but not limited to):a dry etching method. Moreover, in the present embodiment, the firstconductivity type semiconductor layer 515 is, for instance, an N-typesemiconductor layer, and the second conductivity type semiconductorlayer 517 is, for instance, a P-type semiconductor layer.

Next, after the first conductivity type semiconductor layer 515, theactive layer 516, and the second conductivity type semiconductor layer517 are formed, the reflowed patterned photoresist layer 514 is removed.In the present embodiment, the method of removing the reflowed patternedphotoresist layer 514 is, for instance (but not limited to): a wetmethod using a stripper solution or a dry method using plasma ashing.

Next, referring to FIG. 5E, a material layer 519 a and a material layer519 b are formed on the light-emitting diode body 518 in order.Specifically, in the present embodiment, the material layer 519 a andthe material layer 519 b are conformally formed on the light-emittingdiode body 518. Moreover, in the present embodiment, the material of thematerial layer 519 a is an insulating material and is, for instance (butnot limited to): silicon oxide or silicon nitride; the method of formingthe material layer 519 a is, for instance (but not limited to): achemical vapor deposition (CVD) method or a physical vapor deposition(PVD) method; the material of the material layer 519 b is a metalmaterial and is, for instance (but not limited to): aluminum or silver;the method of forming the material layer 519 b is, for instance (but notlimited to): electrochemical plating (ECP) or a physical vapordeposition (PVD) method.

Next, a patterned photoresist layer 520 is formed on the material layer519 b. Specifically, in the present embodiment, the method of formingthe patterned photoresist layer 520 is, for instance (but not limitedto): a lithography process.

Next, referring to FIG. 5F, a first etching process is performed on thematerial layer 519 b using the patterned photoresist layer 520 as a maskto form a reflective material layer 521 located on the sidewall of thelight-emitting diode body 518. Specifically, in the present embodiment,the first etching process is preferably a wet etching process such thatthe reflective metal layer 512 below the patterned photoresist layer 520has an undercut phenomenon. In other words, the edge of the patternedphotoresist layer 520 is protruded beyond the edge of the reflectivemetal layer 521. Moreover, in the present embodiment, the reflectivemetal layer 521 includes two patterns separated from each other, and adistance Lb is between the two patterns.

Next, referring to FIG. 5G, a second etching process is performed on thematerial layer 519 a using the patterned photoresist layer 520 as a maskto form an insulating layer 522 located on the sidewall of thelight-emitting diode body 518. Specifically, in the present embodiment,the insulating layer 522 and the reflective metal layer 521 disposed onthe insulating layer 522 form a reflective structure 523 reflectinglight emitted from the light-emitting diode body 518. However, thedisclosure is not limited thereto. In other embodiments, the reflectivelayer 523 may only include the reflective metal layer 521.

In the present embodiment, since the reflective metal layer 521 and theinsulating layer 522 are defined by the same mask (i.e., the patternedphotoresist layer 520), the reflective structure 523 is formed in thesame photomask process. Moreover, in the present embodiment, the secondetching process is preferably a dry etching process such that theinsulating layer 522 below the patterned photoresist layer 520 does nothave an undercut phenomenon. As a result, the edge of the insulatinglayer 522 is protruded beyond the edge of the reflective metal layer521. Moreover, in the present embodiment, the insulating layer 522similarly includes two patterns separated from each other, and adistance La is between the two patterns. As described above, the edge ofthe insulating layer 522 is protruded beyond the edge of the reflectivemetal layer 521, and therefore the distance Lb is greater than thedistance La.

It should be mentioned that, as described above, since thelight-emitting diode body 518 has an angle θ about 30 degrees to 85degrees, the reflective structure 523 disposed on the sidewall of thelight-emitting diode body 518 can control the light emitted by thelight-emitting diode body 518 to be emitted out of the same side of thelight-emitting diode body 518. Next, referring to FIG. 5H, a conductivelayer 524 is formed on the substrate 500, wherein the conductive layer524 covers the patterned photoresist layer 520 and the secondconductivity type semiconductor layer 517. Specifically, in the presentembodiment, the conductive layer 524 is a discontinuous film layer. Inother words, in the present embodiment, the conductive layer 524covering the patterned photoresist layer 520, the conductive layer 524covering the substrate 500 not covered by the patterned photoresistlayer 520, and the conductive layer 524 covering the second conductivitytype semiconductor layer 517 not covered by the patterned photoresistlayer 520 are separate from one another. It should be mentioned that, asdescribed above, since the edge of the patterned photoresist layer 520and the edge of the insulating layer 522 are both protruded beyond theedge of the reflective metal layer 521, the conductive layer 524 canbecome a discontinuous film layer. Moreover, in the present embodiment,the material of the conductive layer 524 is, for instance (but notlimited to) a nickel/gold (Ni/Au) laminated structure, atitanium/aluminum (Ti/Al) laminated structure, or other metal materialsmeeting contact resistance requirements; the method of forming theconductive layer 524 is, for instance (but not limited to):electrochemical plating, physical vapor deposition, or vapor deposition.

Moreover, in the present embodiment, the conductive layer 524 coveringthe second conductivity type semiconductor layer 517 not covered by thepatterned photoresist layer 520 is used as an electrode 525. In otherwords, in the present embodiment, the electrode 525 is similarly definedby the patterned photoresist layer 520 defining the reflective structure523, indicating that the electrode 525 and the reflective structure 523are formed in the same photomask process. Moreover, in the presentembodiment, the electrode 525 is, for instance, a P-type electrode.

Next, referring to FIG. 5I, the patterned photoresist layer 520 and theconductive layer 524 covering the patterned photoresist layer 520 areremoved and the conductive layer 524 (i.e., the electrode 525) coveringthe second conductivity type semiconductor layer 517 and thesemiconductor layer 524 covering the substrate 500 are left.Specifically, in the present embodiment, the method of removing thepatterned photoresist layer 520 is, for instance (but not limited to): awet method using a stripper solution or a dry method using plasmaashing. It should be mentioned that, as described above, since theconductive layer 524 is a discontinuous film layer, the issue that thepatterned photoresist layer 520 cannot be removed due to a continuousfilm layer formed thereon can be prevented.

Next, referring to FIG. 5J, a carrier substrate 526 on which a bondinglayer 527 is formed is provided. In the present embodiment, the materialof the carrier substrate 526 is, for instance (but not limited to):glass, plastic or a chemical material such as polyimide, polyethyleneterephthalate, or polycarbonate. Moreover, in the present embodiment,the material of the bonding layer 527 is, for instance (but not limitedto): tin indium (Sn/In) alloy, gold (Au), copper (Cu), or other alloymaterials; and the method of forming the bonding layer 527 is, forinstance (but not limited to): electroplating, vapor deposition, orphysical vapor deposition.

Next, the carrier substrate 526 and the substrate 500 are bondedtogether to form the structure shown in FIG. 5J. Specifically, in thepresent embodiment, the bonding layer 527 and the reflective structure523 are in contact with each other, and the bonding layer 527 and theelectrode 525 are in contact with each other.

Next, referring to FIG. 5K, the substrate 500 is removed. Specifically,in the present embodiment, the method of removing the substrate 500 is,for instance (but not limited to): a laser lift-off method. It should bementioned that, the conductive layer 524 covering the substrate 500 isalso removed when the substrate 500 is removed, and the firstconductivity type semiconductor layer 515 is exposed.

Next, referring to FIG. 5L, an electrode 528 is formed on the firstconductivity type semiconductor layer 515. In the present embodiment,the material of the electrode 528 is, for instance (but not limited to):a nickel/gold (Ni/Au) laminated structure, a titanium/aluminum (Ti/Al)laminated structure, or other metal materials. Moreover, in the presentembodiment, the electrode 528 is, for instance, an N-type electrode.

In an embodiment, the method of forming the electrode 528 includes (butis not limited to) the following steps: first, a patterned hard masklayer (not shown) is formed on the first conductivity type semiconductorlayer 515; next, an electrode adhesive composition (not shown) is formedon the patterned hard mask layer; next, the electrode 528 is definedusing an imprinting method. In another embodiment, the method of formingthe electrode 528 includes (but is not limited to) the following steps:after a patterned hard mask layer (not shown) is formed on the firstconductivity type semiconductor layer 515, the electrode 528 is definedusing a vapor deposition method. Moreover, in the present embodiment,although the electrode 528 includes a plurality of electrode patternsseparate from one another, the disclosure is not limited thereto. Inother embodiments, the electrode 528 can also be a sheet electrode.

At this point, the manufacture of the light-emitting diode 529 is almostcompleted. Specifically, in the present embodiment, the light-emittingdiode 529 includes the light-emitting diode body 518, the reflectivestructure 523, the electrode 525, and the electrode 528, wherein thereflective structure 523 is disposed on the sidewall of thelight-emitting diode body 518 and includes the insulating layer 522 andthe reflective metal layer 521 located on the insulating layer 522. As aresult, a display apparatus including the light-emitting diode 529 canhave good luminous efficiency. Moreover, in the present embodiment, thelight-emitting diode 529 is a vertical type micro light-emitting diode.

Next, referring to FIG. 5M, after a heating process is performed on thecarrier substrate 526, the light-emitting diode 529 temporarily placedon the carrier substrate 526 is grabbed by a grabbing apparatus 530,wherein a portion of the bonding layer 527 is attached to thelight-emitting diode 529 and in contact with the reflective structure523 and the electrode 525. Specifically, in the present embodiment, theprocess temperature of the heating process is, for instance, 200° C. to700° C., and the process time of the heating process is, for instance,0.5 minutes to 5 minutes.

It should be mentioned that, after the operation of grabbing thelight-emitting diode 529 is completed, any person having ordinary skillin the art should understand that, the light-emitting diode 529 can beassembled in a display apparatus using any known process steps accordingto different applications.

Moreover, in the embodiment of FIG. 5A to FIG. 5M, the reflectivestructure 523 is a bilayer structure, i.e., includes the insulatinglayer 522 and the reflective metal layer 521 stacked in order, but thedisclosure is not limited thereto. In other embodiments, the reflectivelayer 523 can also be a structure having three or more layers. Forinstance, in an embodiment, the reflective structure 523 can furtherinclude another insulating layer between the insulating layer 522 andthe reflective metal layer 521, and the refractive index of the otherinsulating layer is different from the refractive index of theinsulating layer 522.

Moreover, in the embodiment of FIG. 5A to FIG. 5M, the reflectivestructure 523 includes the insulating layer 522 and the reflective metallayer 521 stacked in order, but the disclosure is not limited thereto.In other embodiments, the reflective layer 523 can also include twoinsulating layers stacked in order and having different refractiveindices. In the following, detailed description is provided withreference to FIG. 6A to FIG. 6B.

FIG. 6A to FIG. 6B are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.FIG. 6A is a step performed after FIG. 5D. Moreover, the same or similarcomponents in the embodiment of FIG. 6A to FIG. 6B and the embodiment ofFIG. 5A to FIG. 5M can be implemented by the same material or method,and therefore the same descriptions as the embodiment of FIG. 5A to FIG.5M are not repeated herein, and the differences between the two aremainly described.

First, referring to FIG. 6A, a material layer 619 a and a material layer619 b are formed on the light-emitting diode body 518 in order.Specifically, in the present embodiment, the material layer 619 a andthe material layer 619 b are conformally formed on the substrate 500.Moreover, in the present embodiment, the material of the material layer619 a and the material layer 619 b is an insulating material, and therefractive index of the material layer 619 a is different from therefractive index of the material layer 619 b. In the present embodiment,the refractive index of the material layer 619 b is, for instance,greater than the refractive index of the material layer 619 a.Specifically, in the present embodiment, the difference between therefractive index of the material layer 619 b and the refractive index ofthe material layer 619 a is, for instance, between 0.4 and 0.9. Fromanother perspective, in the present embodiment, the material of thematerial layer 619 a is, for instance, silicon oxide, and the materialof the material layer 619 b is, for instance, silicon nitride, but thedisclosure is not limited thereto. Moreover, in the present embodiment,the method of forming the material layer 619 a and the material layer619 b is, for instance (but not limited to): a chemical vapor depositionmethod or a physical vapor deposition method.

Next, a patterned photoresist layer 620 is formed on the material layer619 b. Specifically, in the present embodiment, the method of formingthe patterned photoresist layer 620 is, for instance (but not limitedto): a lithography process.

Next, referring to FIG. 6B, after a first etching process is performedon the material layer 619 b using the patterned photoresist layer 620 asa mask to form an insulating layer 621 located on the sidewall of thelight-emitting diode body 518, a second etching process is similarlyperformed on the material layer 619 a using the patterned photoresistlayer 620 as a mask to form an insulating layer 622 located on thesidewall of the light-emitting diode body 518. Specifically, in thepresent embodiment, the first etching process and the second etchingprocess are preferably dry etching processes having the same processconditions. It should be mentioned that, in the present embodiment, inthe dry etching process, the etch rate of the material layer 619 a isless than the etch rate of the material layer 619 b. As a result, theinsulating layer 621 below the patterned photoresist layer 620 has anundercut phenomenon such that the edge of the patterned photoresistlayer 620 and the edge of the insulating layer 622 are protruded beyondthe edge of the insulating layer 621. Moreover, in the presentembodiment, the insulating layer 621 and the insulating layer 622 bothrespectively include two patterns separate from each other, wherein thedistance Lb is between the two patterns of the insulating layer 621, andthe distance La is between the two patterns of the insulating layer 622.As described above, the edge of the insulating layer 622 is protrudedbeyond the edge of the insulating layer 621, and therefore the distanceLb is greater than the distance La.

More specifically, in the present embodiment, the insulating layer 622and the insulating layer 621 disposed on the insulating layer 622 form areflective structure 623 reflecting light emitted from thelight-emitting diode body 518. It should be mentioned that, in thepresent embodiment, since the insulating layer 621 and the insulatinglayer 622 are defined by the same mask (i.e., the patterned photoresistlayer 620), the reflective structure 623 is formed in the same photomaskprocess. More specifically, as described above, since the light-emittingdiode body 518 has an angle θ about 30 degrees to 85 degrees, thereflective structure 623 disposed on the sidewall of the light-emittingdiode body 518 can control the light emitted by the light-emitting diodebody 518 to be emitted out of the same side of the light-emitting diodebody 518.

It should be mentioned that, based on the contents of the embodiment ofFIG. 5A to FIG. 5M and the embodiment of FIG. 6A to FIG. 6B, any personhaving ordinary skill in the art should understand that, after thereflective structure 623 disposed on the sidewall of the light-emittingdiode body 518 is formed, the manufacture of the light-emitting diodecan be completed using the same technical means according to thedescriptions of FIG. 5H to FIG. 5M.

Moreover, in the embodiment of FIG. 6A to FIG. 6B, the reflectivestructure 623 is a bilayer structure, i.e., includes the insulatinglayer 622 and the insulating layer 621 stacked in order, but thedisclosure is not limited thereto. In other embodiments, the reflectivelayer 623 can also be a structure having three or more layers. Forinstance, in an embodiment, the reflective structure 623 can furtherinclude another insulating layer, and the refractive index of the otherinsulating layer can be different from the refractive index of theinsulating layer 622 and the refractive index of the insulating layer621. As another example, in an embodiment, the reflective structure 623can also include the insulating layer 622 and the insulating layer 621alternately and repeatedly stacked.

Moreover, in the embodiment of FIG. 5A to FIG. 5M, the electrode 528 isdirectly formed on the first conductivity type semiconductor layer 515,but the disclosure is not limited thereto. In other embodiments, theelectrode 528 can also be formed on the first conductivity typesemiconductor layer 515 by the following steps. First, the electrode 528is formed on an opposite substrate, and then the opposite substrate onwhich the electrode 528 is formed and an array substrate are assembledtogether. In the following, detailed description is provided withreference to FIG. 7A to FIG. 7C.

FIG. 7A to FIG. 7C are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.FIG. 7A is a step performed after FIG. 5I. Moreover, the same or similarcomponents in the embodiment of FIG. 7A to FIG. 7C and the embodiment ofFIG. 5A to FIG. 5M can be implemented by the same material or method,and therefore the same descriptions as the embodiment of FIG. 5A to FIG.5M are not repeated herein, and the differences between the two aremainly described.

First, referring to FIG. 7A, an array substrate 726 on which a bondinglayer 727 is formed is provided. Specifically, in the presentembodiment, the array substrate 726 can be any array substrate known toany person having ordinary skill in the art. For instance, in anembodiment, the array substrate 726 can include a device layer locatedon the substrate and formed by at least one insulating layer or at leastone conductive layer or a combination of the two. Specifically, in anembodiment, the device layer can include, for instance, a plurality ofscan lines, a plurality of data lines, a plurality of transistors, aplurality of electrodes, and a plurality of capacitors. From anotherperspective, in an embodiment, the array substrate 726 is, for instance,an active device array substrate. In another embodiment, the arraysubstrate 726 is, for instance, a thin-film transistor (TFT) arraysubstrate.

In the present embodiment, the material of the bonding layer 727 is, forinstance (but not limited to): tin indium (Sn/In) alloy, Cu, Au, orother alloy materials, and the method of forming the bonding layer 727is, for instance (but not limited to): electroplating, physical vapordeposition, or vapor deposition.

Next, the array substrate 726 and the substrate 500 are bonded togetherto form the structure shown in FIG. 7A. Specifically, in the presentembodiment, the bonding layer 727 and the reflective structure 523 arein contact with each other, and the bonding layer 727 and the electrode525 are in contact with each other.

Next, referring to FIG. 7B, the substrate 500 is removed. Since relevantdescriptions of the method and steps of removing the substrate 500 areprovided in detail in the embodiment of FIG. 5A to FIG. 5M, the methodand steps of removing the substrate 500 are not repeated herein.

Next, referring to FIG. 7C, an opposite substrate 729 on which anelectrode 728 is formed is provided. Specifically, in the presentembodiment, the opposite substrate 729 can be any opposite substrateknown to any person having ordinary skill in the art. For instance, inan embodiment, the opposite substrate 729 can be achieved, for instance,by the opposite substrate 140 in the embodiment of FIG. 1.

In the present embodiment, the material of the electrode 728 is, forinstance, a transparent electrode material including (but not limitedto): indium tin oxide (ITO) and indium zinc oxide (IZO); and the methodof forming the electrode 728 is, for instance (but not limited to):physical vapor deposition, vapor deposition, or electroplating.Moreover, in the present embodiment, the electrode 728 is, for instance,an N-type electrode. Moreover, in the present embodiment, the electrode728 is, for instance, a common electrode.

Next, the array substrate 726 and the opposite substrate 729 areassembled together to form the structure shown in FIG. 7C to completethe manufacture of a display apparatus 70 including a light-emittingdiode 730. Specifically, in the present embodiment, after the arraysubstrate 726 and the opposite substrate 729 are assembled together, theelectrode 728 is in contact with the first conductivity typesemiconductor layer 515 of the light-emitting diode body 518 and formedon the first conductivity type semiconductor layer 515.

It should be mentioned that, in the present embodiment, thelight-emitting diode 730 includes the light-emitting diode body 518, thereflective structure 523, the electrode 525, and the electrode 728,wherein the reflective structure 523 is disposed on the sidewall of thelight-emitting diode body 518 and includes the insulating layer 522 andthe reflective metal layer 521 stacked in order. As a result, thedisplay apparatus 70 can have good luminous efficiency. In anotherembodiment, the reflective structure 523 can also only include thereflective metal layer 521.

Moreover, in the embodiment of FIG. 7A to FIG. 7C, to improve thecontact effect between the electrode 728 and the first conductivity typesemiconductor layer 515, any person having ordinary skill in the artshould understand that, according to the content disclosed by FIG. 5L,after the substrate 500 is removed and before the array substrate 726and the opposite substrate 729 are assembled together, the electrode 528can be directly formed on the first conductivity type semiconductorlayer 515.

Moreover, although the light-emitting diode 529 in the embodiment ofFIG. 5A to FIG. 5M is a vertical type micro light-emitting diode, thedisclosure is not limited thereto. In other embodiments, thelight-emitting diode can also be a flip-chip type micro light-emittingdiode. In the following, description is provided with reference to FIG.8A to FIG. 8J, FIG. 9A to FIG. 9E, FIG. 10A to FIG. 10E, and FIG. 11A toFIG. 11G.

FIG. 8A to FIG. 8J are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.

First, referring to FIG. 8A, a first conductivity type semiconductormaterial layer 810, an active material layer 811, and a secondconductivity type semiconductor material layer 812 are formed on asubstrate 800 in order. The substrate 800 is, for instance, a sapphiresubstrate, and the thickness thereof is, for instance, greater than orequal to 450 μm. The material of the first conductivity typesemiconductor material layer 810 is, for instance (but not limited to):GaN doped with a first conductivity type dopant or other suitablematerials such as GaN doped with silicon. The material of the activematerial layer 811 is, for instance (but not limited to): a multiplequantum well, and the material thereof is, for instance, InGaN/GaN orother suitable materials. The material of the second conductivity typesemiconductor material layer 812 is, for instance (but not limited to):GaN doped with a second conductivity type dopant or other suitablematerials such as GaN doped with magnesium. Moreover, the firstconductivity type semiconductor material layer 810 is, for instance, anN-type semiconductor material layer, and the second conductivity typesemiconductor material layer 812 is, for instance, a P-typesemiconductor material layer. Moreover, the forming method of the firstconductivity type semiconductor material layer 810, the active materiallayer 811, and the second conductivity type semiconductor material layer812 is, for instance (but not limited to): a metal organic chemicalvapor deposition method, a molecular beam epitaxy method, or othersuitable epitaxial growth methods.

Next, an electrode 813 is formed on the second conductivity typesemiconductor material layer 812. Specifically, in the presentembodiment, the material of the electrode 813 is, for instance (but notlimited to) nickel gold (Ni/Au) alloy, Ni/ITO, or other materialsmeeting contact resistance requirements, and the method of forming theelectrode 813 is, for instance (but not limited to): a lithography andetching process. Moreover, in the present embodiment, the electrode 813is, for instance, a P-type electrode.

Afterwards, referring to FIG. 8B, a patterned photoresist layer 814 isformed on the second conductivity type semiconductor material layer 812.Specifically, in the present embodiment, the patterned photoresist layer814 covers the electrode 813. Moreover, the patterned photoresist layer814 is formed by any half tone process known to any person havingordinary skill in the art. Moreover, in the present embodiment, thepatterned photoresist layer 814 has a stepped contour.

Next, referring to FIG. 8C, a reflow process is performed on thepatterned photoresist layer 814 to form a reflowed patterned photoresistlayer 815. Specifically, in the present embodiment, the reflowedpatterned photoresist layer 815 has an arc-shaped stepped contour.Moreover, in the present embodiment, any reflow process known to anyperson having ordinary skill in the art can be performed on thepatterned photoresist layer 814.

Next, referring to FIG. 8D, a portion of the first conductivity typesemiconductor material layer 810, a portion of the active material layer811, and a portion of the second conductivity type semiconductormaterial layer 812 are removed using the reflowed patterned photoresistlayer 815 as a mask to form a first conductivity type semiconductorlayer 816, an active layer 817, and a second conductivity typesemiconductor layer 818. Specifically, in the present embodiment, thefirst conductivity type semiconductor layer 816, the active layer 817,and the second conductivity type semiconductor layer 818 form alight-emitting diode body 819, wherein the light-emitting diode body 819has an angle θ, and the angle θ is about 30 degrees to 85 degrees,preferably about 60 degrees. Moreover, in the present embodiment, themethod of removing a portion of the first conductivity typesemiconductor material layer 810, a portion of the active material layer811, and a portion of the second conductivity type semiconductormaterial layer 812 is, for instance (but not limited to): a dry etchingmethod. Moreover, in the present embodiment, the first conductivity typesemiconductor layer 816 is, for instance, an N-type semiconductor layer,and the second conductivity type semiconductor layer 818 is, forinstance, a P-type semiconductor layer.

Next, after the first conductivity type semiconductor layer 816, theactive layer 817, and the second conductivity type semiconductor layer818 are formed, the reflowed patterned photoresist layer 815 is removed.In the present embodiment, the method of removing the reflowed patternedphotoresist layer 815 is, for instance (but not limited to): a wetmethod using a stripper solution or a dry method using plasma ashing.

Next, referring to FIG. 8E, an electrode 820 is formed on the substrate800. Specifically, in the present embodiment, the electrode 820 is incontact with the first conductivity type semiconductor layer 816. In thepresent embodiment, the material of the electrode 820 is, for instance(but not limited to): titanium aluminum (Ti/Al) alloy, titanium gold(Ti/Au) alloy, or other metal materials, and the method of forming theelectrode 820 is, for instance (but not limited to): a lithography andetching process. Moreover, in the present embodiment, the electrode 820is, for instance, an N-type electrode.

Next, referring to FIG. 8F, an insulating material layer 821 a and aninsulating material layer 821 b are formed on the substrate 800 inorder. Specifically, in the present embodiment, the insulating materiallayer 821 a and the insulating material layer 821 b are conformallyformed on the substrate 800. In the present embodiment, the method offorming the insulating material layer 821 a and the insulating materiallayer 821 b is, for instance (but not limited to): a chemical vapordeposition method or a physical vapor deposition method.

Moreover, the refractive index of the insulating material layer 821 a isdifferent from the refractive index of the insulating material layer 821b. In the present embodiment, the refractive index of the insulatingmaterial layer 821 b is, for instance, greater than the refractive indexof the insulating material layer 821 a. Specifically, in the presentembodiment, the difference between the refractive index of theinsulating material layer 821 b and the refractive index of theinsulating material layer 821 a is, for instance, between 0.4 and 0.9.From another perspective, in the present embodiment, the material of theinsulating material layer 821 a is, for instance, silicon oxide, and thematerial of the insulating material layer 821 b is, for instance,silicon nitride, but the disclosure is not limited thereto.

Next, referring to FIG. 8G, a portion of the insulating material layer821 a and a portion of the insulating material layer 821 b are removedusing a patterned organic layer 822 as a mask to form an insulatinglayer 823 a, an insulating layer 823 b, an opening O exposing theelectrode 813, and an opening P exposing the electrode 820. In thepresent embodiment, the forming method of the patterned organic layer822 includes (but is not limited to) the following steps: first, anorganic material layer (not shown) is conformally formed on thesubstrate 800; next, a patterned photoresist layer (not shown) is formedon the organic material layer, and then an etching process is performedusing the patterned photoresist layer as a mask to remove the organicmaterial layer not covered by the patterned photoresist layer; next, thepatterned photoresist layer is removed. Moreover, in the presentembodiment, the material of the patterned organic layer 822 is, forinstance (but not limited to): an organic insulating material, aninorganic insulating material, or an insulating material formed bymixing organic insulating material and inorganic insulating material. Inthe present embodiment, the method of removing a portion of theinsulating material layer 821 a and a portion of the insulating materiallayer 821 b is, for instance (but not limited to): a dry etching method.

In the present embodiment, the insulating layer 823 b is disposed on theinsulating layer 823 a, and the insulating layer 823 a and theinsulating layer 823 b are disposed on the sidewall of thelight-emitting diode body 819. Moreover, in the present embodiment, theinsulating layer 823 a and the insulating layer 823 b form a reflectivestructure 824 reflecting light emitted from the light-emitting diodebody 819. It should be mentioned that, as described above, since thelight-emitting diode body 819 has an angle θ about 30 degrees to 85degrees, the reflective structure 824 disposed on the sidewall of thelight-emitting diode body 819 can control the light emitted by thelight-emitting diode body 819 to be emitted out of the same side of thelight-emitting diode body 819.

Next, referring to FIG. 8H, a bonding layer 825 is formed in the openingO and the opening P. In the present embodiment, the material of thebonding layer 825 is, for instance (but not limited to): copper, tin(Sn), or an alloy material thereof. The forming method of the bondinglayer 825 includes (but is not limited to) the following steps. First, abonding material layer (not shown) filled in the opening O and theopening P is formed on the substrate 800, and the forming method thereofis, for instance (but not limited to): an electrochemical plating methodor vapor deposition. Next, the bonding material layer outside theopening O and the opening P is removed to form a bonding layer 825 inthe opening O and the opening P, wherein the method of removing thebonding material layer outside the opening O and the opening P is, forinstance (but not limited to): a chemical mechanical polishing method, achemical etching method, or a physical etching method.

Next, referring to FIG. 8I, a carrier substrate 826 is provided. In thepresent embodiment, the material of the carrier substrate 826 is, forinstance (but not limited to): glass, plastic, or other substratematerials meeting requirements. Next, the carrier substrate 826 and thesubstrate 800 are bonded together to form the structure shown in FIG.8I. Specifically, in the present embodiment, the bonding layer 825 andthe carrier substrate 826 are in contact with each other, and thepatterned organic layer 822 and the carrier substrate 826 are in contactwith each other.

Next, referring to FIG. 8J, the substrate 800 is removed. In the presentembodiment, the method of removing the substrate 800 is, for instance(but not limited to): a laser lift-off method. At this point, themanufacture of the light-emitting diode 827 is almost completed.Specifically, in the present embodiment, the light-emitting diode 827includes the light-emitting diode body 819, the reflective structure824, the electrode 813, the electrode 820, and the bonding layer 825,wherein the reflective structure 824 is disposed on the sidewall of thelight-emitting diode body 819 and includes the insulating layer 823 aand the insulating layer 823 b stacked in order. As a result, a displayapparatus including the light-emitting diode 827 can have good luminousefficiency. Moreover, in the present embodiment, the light-emittingdiode 827 is a flip-chip type micro light-emitting diode.

It should be mentioned that, after the substrate 800 is removed, anyperson having ordinary skill in the art should understand that, thelight-emitting diode 827 can be assembled in a display apparatus usingany known process steps according to different applications.

Moreover, in the embodiment of FIG. 8A to FIG. 8J, the reflectivestructure 824 is a bilayer structure, i.e., includes the insulatinglayer 823 a and the insulating layer 823 b stacked in order, but thedisclosure is not limited thereto. In other embodiments, the reflectivelayer 824 can also be a structure having three or more layers. Forinstance, in an embodiment, the reflective structure 824 can furtherinclude another insulating layer, and the refractive index of the otherinsulating layer can be different from the refractive index of theinsulating layer 823 a and the refractive index of the insulating layer823 b. As another example, in an embodiment, the reflective structure824 can also include the insulating layer 823 a and the insulating layer823 b alternately and repeatedly stacked.

FIG. 9A to FIG. 9E are cross sections of the process of a manufacturingmethod of a display apparatus of another embodiment of the disclosure.FIG. 9A is a step performed after FIG. 8F. Moreover, the same or similarcomponents in the embodiment of FIG. 9A to FIG. 9E and the embodiment ofFIG. 8A to FIG. 8J can be implemented by the same material or method,and therefore the same descriptions as the embodiment of FIG. 8A to FIG.8J are not repeated herein, and the differences between the two aremainly described.

Referring to FIG. 9A, a portion of the insulating material layer 821 a,a portion of the insulating material layer 821 b, and a portion of thefirst conductivity type semiconductor layer 816 are removed using apatterned organic layer 922 as a mask to form an insulating layer 923 a,an insulating layer 923 b, the opening O exposing the electrode 813, andan opening Q exposing the electrode 820 and the substrate 800. In thepresent embodiment, the forming method of the patterned organic layer922 includes (but is not limited to) the following steps: first, anorganic material layer (not shown) is conformally formed on thesubstrate 800; next, a patterned photoresist layer (not shown) is formedon the organic material layer, and then an etching process is performedusing the patterned photoresist layer as a mask to remove the organicmaterial layer not covered by the patterned photoresist layer; next, thepatterned photoresist layer is removed. Moreover, in the presentembodiment, the material of the patterned organic layer 922 is, forinstance (but not limited to): an organic insulating material, aninorganic insulating material, or an insulating material formed bymixing organic insulating material and inorganic insulating material. Inthe present embodiment, the method of removing a portion of theinsulating material layer 821 a, a portion of the insulating materiallayer 821 b, and a portion of the first conductivity type semiconductorlayer 816 is, for instance (but not limited to): a dry etching method.

In the present embodiment, the insulating layer 923 b is disposed on theinsulating layer 923 a, and the insulating layer 923 a and theinsulating layer 923 b are disposed on the sidewall of thelight-emitting diode body 819. Moreover, in the present embodiment, theinsulating layer 923 a and the insulating layer 923 b form a reflectivestructure 924 reflecting light emitted from the light-emitting diodebody 819. It should be mentioned that, as described above, since thelight-emitting diode body 819 has an angle 0 about 30 degrees to 85degrees, the reflective structure 924 disposed on the sidewall of thelight-emitting diode body 819 can control the light emitted by thelight-emitting diode body 819 to be emitted out of the same side of thelight-emitting diode body 819.

Next, referring to FIG. 9B, a bonding layer 925 is formed in the openingO and the opening Q. In the present embodiment, the material of thebonding layer 925 is, for instance (but not limited to): copper, tin, oran alloy material thereof. The forming method of the bonding layer 925includes (but is not limited to) the following steps. First, a bondingmaterial layer (not shown) filled in the opening O and the opening Q isformed on the substrate 900, and the forming method thereof is, forinstance (but not limited to): an electrochemical plating method orvapor deposition. Next, the bonding material layer outside the opening Oand the opening Q is removed to form the bonding layer 925 in theopening O and the opening Q, wherein the method of removing the bondingmaterial layer outside the opening O and the opening Q is, for instance(but not limited to): a chemical mechanical polishing method, a chemicaletching method, or a physical etching method.

Next, referring to FIG. 9C, a carrier substrate 926 is provided. In thepresent embodiment, the material of the carrier substrate 926 is, forinstance (but not limited to): glass, plastic, or substrate materialsmeeting requirements. Next, the carrier substrate 926 and the substrate800 are bonded together to form the structure shown in FIG. 9C.Specifically, in the present embodiment, the bonding layer 925 and thecarrier substrate 926 are in contact with each other, and the patternedorganic layer 922 and the carrier substrate 926 are in contact with eachother.

Next, referring to FIG. 9D, the substrate 800 is removed. Since relevantdescriptions of the method of removing the substrate 800 are provided indetail in the embodiment of FIG. 8A to FIG. 8J, the method of removingthe substrate 800 is not repeated herein. It should be mentioned that,in the present embodiment, a portion of the bonding layer 925 can beexposed by removing the substrate 800.

Next, referring to FIG. 9E, an electrode 927 is formed on the exposedbonding layer 925. Specifically, in the present embodiment, theelectrode 927 and the electrode 820 are respectively disposed on twoopposite sides of the first conductivity type semiconductor layer 816and are connected to each other via the bonding layer 925. In thepresent embodiment, the material of the electrode 927 is, for instance(but not limited to): titanium, aluminum, or an alloy material thereof,and the method of forming the electrode 927 is, for instance (but notlimited to): a lithography and etching process. It should be mentionedthat, in the present embodiment, the electrode 927 and the electrode 820are both, for instance, N-type electrodes, wherein the electrode 820 andthe first conductivity type semiconductor layer 816 have good Ohmiccontact and are used as Ohmic contact electrodes, and the electrode 927is used as a connecting electrode connected to an external circuit.

At this point, the manufacture of the light-emitting diode 928 is almostcompleted. Specifically, in the present embodiment, the light-emittingdiode 928 includes the light-emitting diode body 819, the reflectivestructure 924, the electrode 813, the electrode 820, the electrode 927,and the bonding layer 925, wherein the reflective structure 924 isdisposed on the sidewall of the light-emitting diode body 819 andincludes the insulating layer 923 a and the insulating layer 923 bstacked in order. As a result, a display apparatus including thelight-emitting diode 928 can have good luminous efficiency. Moreover, inthe present embodiment, the light-emitting diode 928 is a flip-chip typemicro light-emitting diode.

It should be mentioned that, after the electrode 927 is formed, anyperson having ordinary skill in the art should understand that, thelight-emitting diode 928 can be assembled in a display apparatus usingany known process steps according to different applications.

Moreover, in the embodiment of FIG. 9A to FIG. 9E, the reflectivestructure 924 is a bilayer structure, i.e., includes the insulatinglayer 923 a and the insulating layer 923 b stacked in order, but thedisclosure is not limited thereto. In other embodiments, the reflectivelayer 924 can also be a structure having three or more layers. Forinstance, in an embodiment, the reflective structure 924 can furtherinclude another insulating layer, and the refractive index of the otherinsulating layer can be different from the refractive index of theinsulating layer 923 a and the refractive index of the insulating layer923 b. As another example, in an embodiment, the reflective structure924 can also include the insulating layer 923 a and the insulating layer923 b alternately and repeatedly stacked.

Moreover, in the embodiments of FIG. 8A to FIG. 8J and FIG. 9A to FIG.9E, the reflective structure is formed by two insulating layers (i.e.,the reflective structure 824 in the embodiment of FIG. 8A to FIG. 8J isformed by the insulating layer 823 a and the insulating layer 823 b, andthe reflective structure 924 in the embodiment of FIG. 9A to FIG. 9E isformed by the insulating layer 923 a and the insulating layer 923 b),but the disclosure is not limited thereto. In other embodiments, thereflective layer can also be formed by one insulating layer and onereflective metal layer. In other embodiments, the reflective layer canalso be formed by one reflective metal layer. In the following, detaileddescription is provided with reference to FIG. 10A to FIG. 10E and FIG.11A to FIG. 11G.

FIG. 10A to FIG. 10E are cross sections of the process of amanufacturing method of a display apparatus of another embodiment of thedisclosure. FIG. 10A is a step performed after FIG. 8D. Moreover, thesame or similar components in the embodiment of FIG. 10A to FIG. 10E andthe embodiment of FIG. 8A to FIG. 8J can be implemented by the samematerial or method, and therefore the same descriptions as theembodiment of FIG. 8A to FIG. 8J are not repeated herein, and thedifferences between the two are mainly described.

Referring to FIG. 10A, first, an insulating material layer 1020 isformed on the substrate 800. Specifically, in the present embodiment,the insulating material layer 1020 is conformally formed on thesubstrate 800. In the present embodiment, the material of the insulatingmaterial layer 1020 is, for instance (but not limited to): silicon oxideor silicon nitride; the method of forming the insulating material layer1020 is, for instance (but not limited to): a chemical vapor depositionmethod or a physical vapor deposition method.

Next, referring to FIG. 10B, a portion of the insulating material layer1020 is removed using the patterned photoresist layer 1021 as a mask toform an insulating layer 1022 and an opening R exposing the electrode813. Specifically, in the present embodiment, the insulating layer 1022is disposed on the sidewall of the light-emitting diode body 819. In thepresent embodiment, the method of forming the patterned photoresistlayer 1021 is, for instance (but not limited to): a lithography process.In the present embodiment, the method of removing a portion of theinsulating material layer 1020 is, for instance (but not limited to): adry etching method.

Then, referring to FIG. 10C, the patterned photoresist layer 1021 isremoved. In the present embodiment, the method of removing the patternedphotoresist layer 1021 is, for instance (but not limited to): a wetmethod using a stripper solution or a dry method using plasma ashing.

Next, an electrode 1023 and a conductive layer 1024 are formed, whereinthe electrode 1023 covers the insulating layer 1022 and is in contactwith the first conductivity type semiconductor layer 816, and theconductive layer 1024 is filled in the opening R and in contact with theelectrode 813. Specifically, in the present embodiment, the electrode1023 and the conductive layer 1024 may belong to the same film layer andhave the same material. In other words, in the present embodiment, theelectrode 1023 and the conductive layer 1024 are, for instance, formedtogether in the same lithography and etching process. In the presentembodiment, the material of the electrode 1023 and the conductive layer1024 is a metal material and is, for instance (but not limited to):aluminum, silver, or an alloy material thereof. In the presentembodiment, the electrode 1023 is, for instance, an N-type electrode.

It should be mentioned that, in the present embodiment, the insulatinglayer 1022 and the electrode 1023 disposed on the insulating layer 1022form a reflective structure 1025 reflecting light emitted from thelight-emitting diode body 819. In other words, in the presentembodiment, the electrode 1023 has the functions of signal transmissionand light reflection at the same time, and therefore the electrode 1023is also regarded as a reflective metal layer. Moreover, as describedabove, since the light-emitting diode body 819 has an angle θ about 30degrees to 85 degrees, the reflective structure 1025 disposed on thesidewall of the light-emitting diode body 819 can control the lightemitted by the light-emitting diode body 819 to be emitted out of thesame side of the light-emitting diode body 819. Moreover, in the presentembodiment, although the insulating layer 1022 and the electrode 1023form the reflective structure 1025, the disclosure is not limitedthereto. In other embodiments, the reflective layer 1025 can also onlyinclude the electrode 1023.

Next, referring to FIG. 10D, a carrier substrate 1026 is provided. Inthe present embodiment, the material of the carrier substrate 1026 is,for instance (but not limited to): glass, plastic, or other substratematerials meeting requirements. Next, the carrier substrate 1026 and thesubstrate 800 are bonded together to form the structure shown in FIG.10E. Specifically, in the present embodiment, the electrode 1023 and thecarrier substrate 1026 are in contact with each other, and theconductive layer 1024 and the carrier substrate 1026 are in contact witheach other.

Next, referring to FIG. 10E, the substrate 800 is removed. Sincerelevant descriptions of the method of removing the substrate 800 areprovided in detail in the embodiment of FIG. 8A to FIG. 8J, the methodof removing the substrate 800 is not repeated herein. At this point, themanufacture of the light-emitting diode 1027 is almost completed.Specifically, in the present embodiment, the light-emitting diode 1027includes the light-emitting diode body 819, the reflective structure1025, the electrode 813, and the conductive layer 1024, wherein thereflective structure 1025 is disposed on the sidewall of thelight-emitting diode body 819 and includes the insulating layer 1022 andthe electrode 1023 stacked in order. As a result, a display apparatusincluding the light-emitting diode 1027 can have good luminousefficiency. Moreover, in the present embodiment, the light-emittingdiode 1027 is a flip-chip type micro light-emitting diode.

It should be mentioned that, after the substrate 800 is removed, anyperson having ordinary skill in the art should understand that, thelight-emitting diode 1027 can be assembled in a display apparatus usingany known process steps according to different applications.

Moreover, in the embodiment of FIG. 10A to FIG. 10E, the reflectivestructure 1025 is a bilayer structure, i.e., includes the insulatinglayer 1022 and the electrode 1023 stacked in order, but the disclosureis not limited thereto. In other embodiments, the reflective layer 1025can also be a structure having three or more layers. For instance, in anembodiment, the reflective structure 1025 can further include anotherinsulating layer between the insulating layer 1022 and the electrode1023, and the refractive index of the other insulating layer isdifferent from the refractive index of the insulating layer 1022.

FIG. 11A to FIG. 11G are cross sections of the process of amanufacturing method of a display apparatus of another embodiment of thedisclosure. FIG. 11A is a step performed after FIG. 8C. Moreover, thesame or similar components in the embodiment of FIG. 11A to FIG. 11G andthe embodiment of FIG. 8A to FIG. 8J can be implemented by the samematerial or method, and therefore the same descriptions as theembodiment of FIG. 8A to FIG. 8J are not repeated herein, and thedifferences between the two are mainly described.

Referring to FIG. 11A, first, a portion of the first conductivity typesemiconductor material layer 810, a portion of the active material layer811, and a portion of the second conductivity type semiconductormaterial layer 812 are removed using the reflowed patterned photoresistlayer 815 as a mask to form a first conductivity type semiconductorlayer 1116, an active layer 1117, and a second conductivity typesemiconductor layer 1118. Specifically, in the present embodiment, thefirst conductivity type semiconductor layer 1116, the active layer 1117,and the second conductivity type semiconductor layer 1118 form alight-emitting diode body 1119, wherein the light-emitting diode body1119 has an angle θ, and the angle θ is about 30 degrees to 85 degrees,preferably about 60 degrees. Moreover, in the present embodiment, themethod of removing a portion of the first conductivity typesemiconductor material layer 810, a portion of the active material layer811, and a portion of the second conductivity type semiconductormaterial layer 812 is, for instance (but not limited to): a dry etchingmethod. Moreover, in the present embodiment, the first conductivity typesemiconductor layer 1116 is, for instance, an N-type semiconductorlayer, and the second conductivity type semiconductor layer 1118 is, forinstance, a P-type semiconductor layer.

Next, after the first conductivity type semiconductor layer 1116, theactive layer 1117, and the second conductivity type semiconductor layer1118 are formed, the reflowed patterned photoresist layer 815 isremoved. In the present embodiment, the method of removing the reflowedpatterned photoresist layer 815 is, for instance (but not limited to): awet method using a stripper solution or a dry method using plasmaashing.

Next, referring to FIG. 11B, an electrode 1120 is formed on thesubstrate 800. Specifically, in the present embodiment, the electrode1120 is in contact with the first conductivity type semiconductor layer1116. Moreover, in the present embodiment, the electrode 1120 is incontact with the substrate 800. In the present embodiment, the materialof the electrode 1120 is, for instance (but not limited to): titaniumaluminum (Ti/Al) alloy, Ti, or Al, and the method of forming theelectrode 1120 is, for instance (but not limited to): a lithography andetching process. Moreover, in the present embodiment, the electrode 1120is, for instance, an N-type electrode.

Referring to FIG. 11C, an insulating material layer 1121 is formed onthe substrate 800. Specifically, in the present embodiment, theinsulating material layer 1121 is conformally formed on the substrate800. In the present embodiment, the material of the insulating materiallayer 1121 is, for instance (but not limited to): silicon oxide orsilicon nitride; the method of forming the insulating material layer1121 is, for instance (but not limited to): a chemical vapor depositionmethod or a physical vapor deposition method.

Next, referring to FIG. 11D, a portion of the insulating material layer1121 is removed using the patterned photoresist layer 1122 as a mask toform an insulating layer 1123 and an opening U exposing the electrode813. Specifically, in the present embodiment, the insulating layer 1123is disposed on the sidewall of the light-emitting diode body 1119. Inthe present embodiment, the method of forming the patterned photoresistlayer 1122 is, for instance (but not limited to): a lithography process.In the present embodiment, the method of removing a portion of theinsulating material layer 1121 is, for instance (but not limited to): adry etching method.

Then, referring to FIG. 11E, the patterned photoresist layer 1122 isremoved. In the present embodiment, the method of removing the patternedphotoresist layer 1122 is, for instance (but not limited to): a wetmethod using a stripper solution or a dry method using plasma ashing.

Next, a conductive layer 1124 is formed, wherein the conductive layer1124 covers the insulating layer 1123 and is filled in the opening U tobe in contact with the electrode 813. In the present embodiment, thematerial of the conductive layer 1124 is a metal material and is, forinstance (but not limited to): aluminum, silver, or an alloy materialthereof. In the present embodiment, the method of forming the conductivelayer 1124 is, for instance (but not limited to): a lithography andetching process.

It should be mentioned that, in the present embodiment, the electrode813 and the conductive layer 1124 are both, for instance, P-typeelectrodes, wherein the electrode 813 and the second conductivity typesemiconductor layer 1118 have good Ohmic contact and are used as Ohmiccontact electrodes, and the conductive layer 1124 is used as aconnecting electrode connected to an external circuit. Moreover, in thepresent embodiment, the insulating layer 1123 and the conductive layer1124 disposed on the insulating layer 1123 form a reflective structure1125 reflecting light emitted from the light-emitting diode body 1119.In other words, in the present embodiment, the conductive layer 1124 hasthe functions of signal transmission and light reflection at the sametime, and therefore the conductive layer 1124 can also be regarded as areflective metal layer. Moreover, as described above, since thelight-emitting diode body 1119 has an angle θ about 30 degrees to 85degrees, the reflective structure 1125 disposed on the sidewall of thelight-emitting diode body 1119 can control the light emitted by thelight-emitting diode body 1119 to be emitted out of the same side of thelight-emitting diode body 1119.

Next, referring to FIG. 11F, a carrier substrate 1126 is provided. Inthe present embodiment, the material of the carrier substrate 1126 is,for instance (but not limited to): glass, plastic, or substratematerials meeting requirements. Next, the carrier substrate 1126 and thesubstrate 800 are bonded together to form the structure shown in FIG.11F. Specifically, in the present embodiment, the conductive layer 1124and the carrier substrate 1126 are in contact with each other.

Next, referring to FIG. 11G, the substrate 800 is removed. Sincerelevant descriptions of the method of removing the substrate 800 areprovided in detail in the embodiment of FIG. 8A to FIG. 8J, the methodof removing the substrate 800 is not repeated herein. At this point, themanufacture of the light-emitting diode 1127 is almost completed.Specifically, in the present embodiment, the light-emitting diode 1127includes the light-emitting diode body 1119, the reflective structure1125, the electrode 813, and the electrode 1120, wherein the reflectivestructure 1125 is disposed on the sidewall of the light-emitting diodebody 1119 and includes the insulating layer 1123 and the conductivelayer 1124 stacked in order. As a result, a display apparatus includingthe light-emitting diode 1127 can have good luminous efficiency.Moreover, in the present embodiment, the light-emitting diode 1127 is aflip-chip type micro light-emitting diode.

It should be mentioned that, after the substrate 800 is removed, anyperson having ordinary skill in the art should understand that, thelight-emitting diode 1127 can be assembled in a display apparatus usingany known process steps according to different applications. Moreover,in the embodiment of FIG. 11A to FIG. 11G, the reflective structure 1125is a bilayer structure, i.e., includes the insulating layer 1123 and theconductive layer 1124 stacked in order, but the disclosure is notlimited thereto. In other embodiments, the reflective layer 1125 canalso be a structure having three or more layers. For instance, in anembodiment, the reflective structure 1125 can further include anotherinsulating layer between the insulating layer 1123 and the conductivelayer 1124, and the refractive index of the other insulating layer isdifferent from the refractive index of the insulating layer 1123.

Based on the above, in the display apparatus of the disclosure, theratio of the distance between two surfaces of the light-emitting diodedisposed opposite to each other and parallel to the substrate to thedistance between the upper surface of the metal layer electricallyconnected to the transistor and the light-emitting diode and thesubstrate in the direction perpendicular to the substrate is greaterthan or equal to 0.25 and less than or equal to 6, and therefore thedisplay apparatus can have good luminous efficiency or good structuralstrength. Moreover, the display apparatus obtained from themanufacturing method of the display apparatus of the disclosure includesa reflective structure disposed on the sidewall of the light-emittingdiode body, such that the display apparatus can have good luminousefficiency.

Although the disclosure has been described with reference to the aboveembodiments, it will be apparent to one of the ordinary skill in the artthat modifications and variations to the described embodiments may bemade without departing from the spirit and scope of the disclosure.Accordingly, the scope of the disclosure will be defined by the attachedclaims not by the above detailed descriptions.

What is claimed is:
 1. An apparatus, comprising: a substrate; a metallayer disposed on the substrate; and a diode disposed on the metal layerand comprising a diode body and a first electrode bonded to the metallayer, wherein the diode body has a first surface facing the substrateand a second surface opposite to the first surface, and a roughness ofthe second surface is greater than a roughness of first surface.
 2. Theapparatus of claim 1, wherein a first distance is between the firstsurface and the second surface, and the first distance is greater thanor equal to 2 μm and less than or equal to 12 μm.
 3. The apparatus ofclaim 1, wherein the diode body comprises: a first conductivity typesemiconductor layer; an active layer disposed on the first conductivitytype semiconductor layer; and a second conductivity type semiconductorlayer disposed on the active layer.
 4. The apparatus of claim 1, whereinthe metal layer is a single film layer.
 5. The apparatus of claim 1,further comprising a flat layer disposed between the diode and thesubstrate, wherein an upper surface of the metal layer is locatedbetween the flat layer and the first electrode.
 6. The apparatus ofclaim 1, wherein a second distance is between an upper surface of themetal layer and the substrate in a direction perpendicular to thesubstrate, and the second distance is greater than or equal to 2 μm andless than or equal to 8 μm.
 7. The apparatus of claim 1, furthercomprising: a wavelength conversion layer disposed on the diode; and alight-blocking pattern layer disposed adjacent to the wavelengthconversion layer.
 8. The apparatus of claim 7, further comprising: acolor filter layer disposed on the wavelength conversion layer; and anadhesive layer disposed between the color filter layer and thewavelength conversion layer.
 9. The apparatus of claim 7, wherein athickness of the wavelength conversion layer is less than a thickness ofthe light-blocking pattern layer.
 10. The apparatus of claim 1, whereina width of an upper surface of the metal layer is greater than a widthof a lower surface of the first electrode.
 11. The apparatus of claim 5,wherein the metal layer includes a first metal layer and a second metallayer located above the first metal layer, the flat layer covers thefirst metal layer, and the second metal layer is in the flat layer. 12.The apparatus of claim 1, wherein the diode further comprises a secondelectrode over the second surface of the diode body.